Multiple Quantum Well-based AlGaN/GaN MOS-HEMTs with Stacked-Gate Dielectric Engineering for High-Power and High- Frequency Applications

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dc.contributor.authorKumar, Nitish
dc.date.accessioned2026-08-21T11:39:00Z
dc.date.available2026-08-21T11:39:00Z
dc.date.issued2026
dc.identifier.urihttp://nits.ndl.gov.in/handle/123456789/108
dc.language.isoen
dc.publisherNational Institute of Technology, Silchar
dc.titleMultiple Quantum Well-based AlGaN/GaN MOS-HEMTs with Stacked-Gate Dielectric Engineering for High-Power and High- Frequency Applications
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