Bipolar Nonvolatile Resistive Switching Memory Using Copper Ion Conductive Polymeric Film
| dc.contributor.author | Swain, Rosan | |
| dc.date.accessioned | 2026-10-09T06:26:44Z | |
| dc.date.available | 2026-10-09T06:26:44Z | |
| dc.date.issued | 2022 | |
| dc.description.abstract | The resistance change memory is considered the basic building block for the new-age digital memory technology and can have applications in the areas like hardware implementation of neuromorphic computing and artificial intelligence. The resistance change memory is simple two-terminal metal-insulator-metal structures. Out of these two metal contacts, one is electrochemically active. For the development of the resistive switching memory, the switching or sandwiching layer is mostly explored for improved switching characteristics. The sandwiching layer could be oxides, semiconducting layers, or an ion-conducting material. Even organic or polymeric materials are also explored as the switching layer. The use of polymeric materials offers the advantage of developing flexible or wearable electronics. In the present study, we used copper-ion conductive polymer electrolyte as the switching layer where the top electrode used is copper. The device is a vertical two-terminal structure: ITO/Cu-polymer electrolyte/Cu. Initially, the copper-ion conductive solid polymer electrolyte (SPE) was synthesized and characterized. Then two-terminal structures of ITO/Cu-polymer electrolyte/Cu devices were fabricated and their switching properties were studied. Bipolar resistive switching is observed in simple Cu/CuSCN-PEO/ITO devices containing various concentrations of CuSCN complexes when the bias voltage is applied. By sweeping the voltage, the first SET process occurs at a higher voltage known as forming process. In the following switching cycles, SET occurs at ~0.7 V, and RESET occurs at -0.7 V. The switching behavior is highly influenced by Copper(I) thiocyanate concentration. We expect the observed switching is attributed to the production and dissolution of a copper metal filament inside the SPE film induced by electrochemical processes. The devices have OFF/ON resistance ratios up to 107. According to electrical measurements, 1% Copper(I) thiocyanate concentration is the most stable for switching applications. These findings suggest that SPE-based redox-type switching devices have the potential to explore further flexible electronic applications. | |
| dc.identifier.uri | http://nits.ndl.gov.in/handle/123456789/199 | |
| dc.language.iso | en | |
| dc.publisher | Department of Physics, NITS | |
| dc.relation.ispartofseries | D1555 | |
| dc.title | Bipolar Nonvolatile Resistive Switching Memory Using Copper Ion Conductive Polymeric Film | |
| dc.type | Thesis |