Ota, Subhrakant2026-10-092026-10-092022http://nits.ndl.gov.in/handle/123456789/197Due to versatility in thin-film deposition techniques, the exploitation of a deposition process is beneficial for designing a device for a suitable application. Thin-film deposition process by the method of sputtering helps in smooth deposition of thin films. Literature survey has shown the advantages of RF sputtering over DC sputtering in terms of film quality and ease of deposition of various kind of materials. In this project we sputtered ITO over glass using RF sputtering method and studied its optical and electrical properties. We know that with the advancement in technology, the aim for data security has also increased. The writing ability of modern memory devices has proved their incompetence in the permanent storage of confidential data. Halide perovskite-based memory devices have been actively researched for resistive switching memory applications because of their excellent electronic properties. As pure RbPbI3 is non-switchable, we looked for the WORM nature exhibited by this functional material after depositing over annealed sputtered ITO. We observed that due to the low resistance of ITO at 3000C the device showed its WORM nature having a decent OFF to ON ratio of 104. The device showed great prospects for data storage and provided scope for further investigations.enThesis